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彭韬玮,王霄,敖金平.GaN基电力电子器件关键技术的进展[J].电源学报,2019,17(3):4-15
GaN基电力电子器件关键技术的进展
Progress in Key Technologies for GaN-based Power Electronic Devices
投稿时间:2019-02-28  修订日期:2019-05-01
DOI:10.13234/j.issn.2095-2805.2019.3.4
中文关键词:  氮化镓(GaN)  GaN横向器件  GaN垂直器件
英文关键词:gallium nitride(GaN)  GaN lateral device  GaN vertical device
基金项目:国家重点研发计划资助项目(2017YFB0403000);中央高校基本科研业务费专项资金资助项目(JB181110)
作者单位E-mail
彭韬玮 西安电子科技大学微电子学院, 西安 710071  
王霄 西安电子科技大学微电子学院, 西安 710071 x.wang@xidian.edu.cn 
敖金平 西安电子科技大学微电子学院, 西安 710071  
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中文摘要:
      氮化镓GaN(gallium nitride)材料非常适合应用于高频、高功率、高压的电子电力器件当中。目前,GaN功率电子器件技术方案主要分为Si衬底上横向结构器件和GaN自支撑衬底上垂直结构器件2种。其中,横向结构器件由于制造成本低且有良好的互补金属-氧化物-半导体CMOS(complementary metal-oxide-semiconductor)工艺兼容性已逐步实现产业化,但是存在材料缺陷多、常关型难实现、高耐压困难以及电流崩塌效应等问题;垂直结构器件能够在不增大芯片尺寸的条件下实现高击穿电压,具有非常广阔的市场前景,也面临着材料生长、器件结构设计和可靠性等方面的挑战。基于此,主要针对这两种器件综述介绍并进行了展望。
英文摘要:
      Gallium nitride(GaN) materials are well-suited for high-frequency, high-power and high-voltage power electronic devices. At present, the technical schemes for GaN power electronic devices are mainly classified into two types, i. e., lateral structure devices on Si substrates and vertical structure devices on GaN free-standing substrates. The lateral structure devices have been applied to industrial productions owing to their low manufacturing cost and satisfying complementary metal-oxide-semiconductor(COMS) process compatibility. However, there are still problems, such as many defects in material, difficulty in realizing E-mode and high breakdown voltage, and current collapse effect. The vertical structure devices can achieve high breakdown voltage without increasing the chip size, and have a very broad market prospect. Nevertheless, they also face many challenges, including material growth, and design and reliability of device structure. In this review, we briefly introduce the above two types of devices and provide an outlook of the key technologies.
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