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王健婧,Suvankar BISWAS,Mohamed H. AHMED,Michael DE ROOIJ.基于氮化镓场效应晶体管的高性能48 V总线电源[J].电源学报,2019,17(3):91-102
基于氮化镓场效应晶体管的高性能48 V总线电源
High-performance eGaN FET-based Bus Converters for 48 V Power Architecture
投稿时间:2019-02-28  修订日期:2019-05-23
DOI:10.13234/j.issn.2095-2805.2019.3.91
中文关键词:  氮化镓  场效应晶体管  48 V电源架构  总线电源  多相变换器  多电平变换器  LLC谐振变换器
英文关键词:gallium nitride(GaN)  field effect transistor(FET)  48 V power architecture  bus converter  multiphase converter  multilevel converter  LLC resonant converter
基金项目:
作者单位E-mail
王健婧 Efficient Power Conversion, El Segundo, CA 90245, U. S. A.  
Suvankar BISWAS Efficient Power Conversion, El Segundo, CA 90245, U. S. A.  
Mohamed H. AHMED Center for Power Electronic Systems, VirginiaPolytechnic Institute and State University, Blacksburg, VA 24061, U. S. A.  
Michael DE ROOIJ Efficient Power Conversion, El Segundo, CA 90245, U. S. A. michael.derooij@epc-co.com 
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中文摘要:
      48 V电源架构在数据中心电源系统中的推广激发了人们对具有更高效率和功率密度的先进电源解决方案的极大兴趣。具有超低寄生电容和导通电阻的氮化镓场效应晶体管GaN FET(gallium nitride field effecttransistor)开辟了一种新方法,可实现前所未有的转换器性能和小型化。评估了采用与适当功率等级相对应的各种拓扑结构的48 V电源架构的DC-DC电源转换中的GaN FET。首先涵盖GaN FET的开关特性分析;然后将GaN FET用于开发各种48 V降压转换器,从同步降压、多电平和多相转换器到LLC谐振转换器;最后提供了选择合适GaN FET的指南。与传统基于MOSFET的转换器相比,这些基于GaN FET的转换器在不增加成本的情况下功率效率和功率密度显著提高。
英文摘要:
      The promotion of 48 V power architecture in data center power systems has stimulated great interest in advanced power solutions with higher efficiency and higher power density. Gallium nitride field effect transistors (GaN FETs), with ultra-low parasitic capacitances and on-resistance, open up a new way to accomplish unprecedented converter performance and miniaturization for this application. This paper will evaluate eGaN FETs in DC-DC power conversion for the 48 V power architecture using various topologies aligned to suitable power levels. The eGaN FET switching characteristic analysis will be covered at first. Then, eGaN FETs will be used to develop various 48 V stepdown converters that range from the synchronous buck, multilevel and multiphase variants, to the LLC resonant converter. Afterwards, the guidelines for selecting suitable eGaN FETs are provided. These eGaN FET-based converters demonstrate significant improvement in power efficiency and power density over the conventional MOSFET-based converters without increasing cost.
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