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潘溯,胡黎,冯旭东,张春奇,明鑫,张波.600 V耗尽型GaN功率器件栅极驱动方案设计[J].电源学报,2019,17(3):57-63
600 V耗尽型GaN功率器件栅极驱动方案设计
Design of Gate Drive Scheme for 600 V Depletion-mode GaN Power Devices
投稿时间:2019-02-22  修订日期:2019-05-11
DOI:10.13234/j.issn.2095-2805.2019.3.57
中文关键词:  耗尽型GaN器件  600 V高压  栅极驱动
英文关键词:depletion-mode gallium nitride(GaN)device  600 V high voltage  gate driver
基金项目:国家重点研发计划资助项目(2017YFB0402800)
作者单位E-mail
潘溯 电子科技大学电子薄膜与集成器件国家重点实验室, 成都 610054  
胡黎 电子科技大学电子薄膜与集成器件国家重点实验室, 成都 610054  
冯旭东 电子科技大学电子薄膜与集成器件国家重点实验室, 成都 610054  
张春奇 电子科技大学电子薄膜与集成器件国家重点实验室, 成都 610054  
明鑫 电子科技大学电子薄膜与集成器件国家重点实验室, 成都 610054 min gxin@uestc.edu.cn 
张波 电子科技大学电子薄膜与集成器件国家重点实验室, 成都 610054  
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中文摘要:
      介绍了一种适用于600 V耗尽型氮化镓GaN(gallium nitride)器件的栅极驱动策略以及对应的驱动电路,并分析了采用耗尽型GaN功率器件的原因。驱动电路在功率管开启过程的2个阶段采用2种驱动强度的电流,在减小功率管开启过程中dv/dt的同时,保证功率管的开启速度。基于0.35 μm BCD工艺对电路进行仿真验证,结果表明:在600 V输入电压的半桥驱动应用下,驱动电路在GaN功率器件阈值电压前提供700 mA驱动电流,达到阈值电压后提供190 mA稳定驱动电流,开关节点的dv/dt为150 V/ns,传输延迟加开启延迟为20 ns。
英文摘要:
      A gate drive strategy and the corresponding driver circuit for 600 V depletion-mode gallium nitride (GaN) power devices were presented, and the reason for the use of depletion-mode GaN power devices was analyzed. The driver circuit used current of two driving strengths on two different stages during the turn-on process of the power tube, such that it can ensure the turn-on velocity while reducing the value of dv/dt. The circuit was simulated and verified based on a 0.35 μm BCD process. In the application of half-bridge drive with 600 V input voltage, results showed that the driver circuit can provide a driving current of 700 mA when the gate-source voltage of power device was lower than its threshold voltage, and provide a steady driving current of 190 mA after reaching the threshold voltage; the value of dv/dt at the switch node was 150 V/ns, and the sum of propagation delay plus turn-on delay was 20 ns.
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