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吴俊雄,何宁,徐德鸿.SiC器件对并网逆变器EMC特性和效率的影响[J].电源学报,2019,17(1):136-144
SiC器件对并网逆变器EMC特性和效率的影响
Impact of SiC Devices on EMC Characteristics and Efficiency of Grid-connected Inverter
投稿时间:2018-02-17  修订日期:2018-12-24
DOI:10.13234/j.issn.2095-2805.2019.1.136
中文关键词:  SiC MOSFET  EMC模型  传导干扰  效率
英文关键词:SiC MOSFET  EMC model  conducted noise  efficiency
基金项目:国家自然科学基金资助项目(51337009)
作者单位E-mail
吴俊雄 浙江大学电力电子技术研究所, 杭州 310027  
何宁 浙江大学电力电子技术研究所, 杭州 310027  
徐德鸿 浙江大学电力电子技术研究所, 杭州 310027 xdh@zju.edu.cn 
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中文摘要:
      近年来,宽禁带器件SiC MOSFET在并网逆变器邻域已经取得了越来越多的关注。首先,讨论了SiC MOSFET三相并网逆变器EMC模型的建立,并通过分析噪声源的模型进行等效替代,结合逆变器损耗对于噪声传导路径的阻尼作用,得到了SiC逆变器的EMC仿真模型和理论模型;然后,通过逆变器平台实验的结果与仿真模型和理论模型的结果进行了对比,验证了模型的可行性;最后,通过实验比较了沟道栅SiC逆变器、平面栅SiC逆变器和Si IGBT逆变器3者在相同开关频率下的传导干扰和不同开关频率下的满载效率。
英文摘要:
      In recent years, wide band gap device SiC MOSFET have attracted more and more attention from the field of grid-connected inverter. In this paper, the construction of an EMC model of a grid-connected three-phase SiC MOSFET inverter is discussed at first. Through the analysis of a noise source model, the equivalent substitution is performed. By combining the damping effect of the inverter's power loss on the transmission path of noise, both the simulation and theoretical EMC models of the SiC inverter are derived. Then, experimental results on the inverter platform were compared with those of the simulation and theoretical models, which verified the feasibility of the proposed model. Finally, the conducted interference at the same switching frequency and the rated power efficiency at different switching frequencies were experimentally compared among a trench SiC inverter, a planar SiC inverter, and a Si IGBT inverter.
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