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李辉,钟懿,黄樟坚,廖兴林,谢翔杰,肖洪伟.考虑变温度影响的SiC MOSFET建模与分析[J].电源学报,2019,17(4):185-192
考虑变温度影响的SiC MOSFET建模与分析
Modeling and Analysis of SiC MOSFET Considering Variable-temperature Effect
投稿时间:2017-09-03  修订日期:2018-12-22
DOI:10.13234/j.issn.2095-2805.2019.4.185
中文关键词:  碳化硅MOSFET  温度参数  等效电路  PSpice建模
英文关键词:silicon carbide (SiC) MOSFET  temperature parameter  equivalent circuit  PSpice modeling
基金项目:国家重点研发计划资助项目(2018YFB0905704);中央高校基本科研业务费专项基金资助项目(106112016CDJZR158802);国家自然科学基金资助项目(51377184)
作者单位E-mail
李辉 输配电装备及系统安全与新技术国家重点实验室(重庆大学), 重庆 400044 cqulh@163.com 
钟懿 输配电装备及系统安全与新技术国家重点实验室(重庆大学), 重庆 400044  
黄樟坚 输配电装备及系统安全与新技术国家重点实验室(重庆大学), 重庆 400044  
廖兴林 输配电装备及系统安全与新技术国家重点实验室(重庆大学), 重庆 400044  
谢翔杰 输配电装备及系统安全与新技术国家重点实验室(重庆大学), 重庆 400044  
肖洪伟 输配电装备及系统安全与新技术国家重点实验室(重庆大学), 重庆 400044  
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中文摘要:
      为了准确反映SiC MOSFET在不同温度下的电气特性,对影响SiC MOSFET电气特性的关键参数进行了分析,提出了一种SiC MOSFET等效电路模型。首先,根据SiC MOSFET阈值电压和跨导随温度变化的规律,采用函数拟合的温控电源模型对SiC MOSFET的阈值电压和漏极电流进行补偿;其次,考虑寄生电容与极间电压的关系,采用电容子电路和可变电容模型对SiC MOSFET的寄生电容进行等效模拟,根据SiC MOSFET体二极管对其静、动态特性的影响,利用独立二极管模型描述体二极管特性,进而建立SiC MOSFET的等效电路模型。最后,在不同温度条件下,对该模型进行了仿真并与实验测试结果进行了对比。结果表明所建模型较为准确地描述SiC MOSFET在较宽温度范围内的静、动态特性,验证了模型的有效性。
英文摘要:
      To accurately reflect the electrical characteristics of silicon carbide(SiC) MOSFET at different tempera-tures, the key parameters affecting its electrical characteristics were analyzed in this paper, and a novel equivalent circuit model of SiC MOSFET was proposed. Firstly, according to the temperature-dependent rules of SiC MOSFET's threshold voltage and transconductance, the threshold voltage and drain current of SiC MOSFET were compensated by the temperature-controlled power model based on function fitting. Secondly, considering the relation of parasitic capacitance versus the voltage between electrodes, the parasitic capacitances of SiC MOSFET were equivalently simulated by the model of sub-circuits and variable capacitances. Besides, according to the influences of SiC MOSFET's body diode on its static and dynamic characteristics, its novel equivalent circuit model was established by using the model of independent diode to describe the characteristics of the body diode. Finally, this model was simulated at different temperatures, and the simulation results were compared with the experimental data, showing that the novel model can more accurately reflect the static and dynamic characteristics of SiC MOSFET in a wider temperature range. Therefore, the validity of the proposed model was verified.
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