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何宁,李雅文,杜成瑞,徐德鸿.高功率密度碳化硅MOSFET软开关三相逆变器损耗分析[J].电源学报,2017,15(6):1-9
高功率密度碳化硅MOSFET软开关三相逆变器损耗分析
Loss Analysis of High Power Density SiC-MOSFET Zero-voltage-switching Three-phase Inverter
投稿时间:2017-05-31  修订日期:2017-09-06
DOI:10.13234/j.issn.2095-2805.2017.6.1
中文关键词:  碳化硅MOSFET  软开关  三相逆变器  高效率  高功率密度
英文关键词:SiC MOSFET  zero-voltage-switching(ZVS)  three-phase inverter  high efficiency  high power density
基金项目:国家自然科学基金资助项目(51277163,51337009)
作者单位E-mail
何宁 浙江大学电力电子技术研究所, 杭州 310027  
李雅文 浙江大学电力电子技术研究所, 杭州 310027  
杜成瑞 浙江大学电力电子技术研究所, 杭州 310027  
徐德鸿 浙江大学电力电子技术研究所, 杭州 310027 xdh@zju.edu.cn 
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中文摘要:
      相比硅IGBT,碳化硅MOSFET拥有更快的开关速度和更低的开关损耗。碳化硅MOSFET应用于高开关频率场合时其开关损耗随着开关频率的增加亦快速增长。为进一步提升碳化硅MOSFET逆变器的功率密度,探讨了采用软开关技术的碳化硅MOSFET逆变器。比较了不同开关频率下的零电压开关三相逆变器及硬开关三相逆变器的损耗分布和关键无源元件的体积,讨论了逆变器效率和关键无源元件体积与开关频率之间的关系。随着开关频率从数十kHz逐渐提升至数百kHz,软开关逆变器不仅能够维持较高的转换效率,还能取得更高的功率密度。最后,在1台9 kW软开关三相逆变器和1台9 kW硬开关逆变器上进行了实验验证。
英文摘要:
      Although SiC-MOSFET has higher switching speed and lower switching loss comparing to traditional Si-IGBT, the dynamic loss of the hard switching SiC-MOSFET converter rises quickly with the increment of the switching frequency. To further pushing the power density of three-phase SiC-MOSFET inverter, zero-voltage-switching(ZVS) technique is adopted. In this paper the loss distributions of both a 9 kW hard switching inverter and a 9 kW ZVS inverter with SiC-MOSFET have been derived and compared with respect to physical size of the passive components at different switching frequencies ranging from tens of kHz to hundreds of kHz. With the increment of the switching frequency, ZVS inverter can achieve not only a high conversion efficiency, but also a much higher power density. Finally the advantages of the ZVS inverter are verified by experimental results.
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