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朱应峰,何宁,胡长生,徐德鸿.三相四线制软开关SiC逆变器软开关工况分析[J].电源学报,2018,16(4):120-125,142
三相四线制软开关SiC逆变器软开关工况分析
Analysis of Soft Switching Condition for Three-phase Four-wire Soft Switching SiC Inverter
投稿时间:2017-02-13  修订日期:2018-03-06
DOI:10.13234/j.issn.2095-2805.2018.4.120
中文关键词:  三相四线制零电压开关逆变器  零电压开关正弦脉宽调制  寄生电容
英文关键词:three-phase four-wire zero-voltage-switching inverter  zero-voltage-switching sinusoidal pulse width mo-dulation(ZVS-SPWM)  parasitic capacitance
基金项目:国家自然科学基金重点资助项目(51337009)
作者单位E-mail
朱应峰 浙江大学电气工程学院, 杭州 310027  
何宁 浙江大学电气工程学院, 杭州 310027  
胡长生 浙江大学电气工程学院, 杭州 310027  
徐德鸿 浙江大学电气工程学院, 杭州 310027 xdh@zju.edu.cn 
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中文摘要:
      逆变电源的开关频率上限受到功率器件的动态损耗限制,导致较大的输出滤波元件的体积。零电压开关正弦脉宽调制(ZVS-SPWM)三相四线制逆变器电路只需引入1个辅助开关和2个较小的无源元件,就可以实现电路中所有开关器件的零电压开关。重点分析了SiC MOSFET寄生电容对零电压开关实现的影响,并在此基础上探讨了等效寄生电容值的提取方法,修正了零电压开关条件和功率器件电流、电压应力的计算值。最后在10 kW SiC MOSFET三相四线制零电压开关逆变器实验平台进行了验证。
英文摘要:
      The switching frequency of an inverter is mainly limited by the dynamic loss of power devices, which leads to the large volume of the output filter element. With the introduction of one auxiliary switch and two small passive components, a three-phase four-wire inverter circuit under zero-voltage-switching sinusoidal pulse width modulation (ZVS-SPWM) can realize the ZVS of all switches in the circuit. In this paper, the influence of SiC MOSFET parasitic capacitance on the realization of ZVS is analyzed in detail. On this basis, the extraction method for equivalent parasitic capacitance is discussed, and the calculated values of ZVS condition together with the current and voltage stress of power devices are corrected. Finally, the theoretical analysis was verified on an experimental platform of a 10 kW SiC MOSFET three-phase four-wire ZVS inverter.
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