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江芙蓉,杨树,盛况.碳化硅MOSFET特征参数随温度变化的比较研究[J].电源学报,2018,16(6):143-151
碳化硅MOSFET特征参数随温度变化的比较研究
Comparative Study on Temperature-dependent Characteristic Parameters of SiC MOSFET
投稿时间:2017-12-09  修订日期:2018-07-09
DOI:10.13234/j.issn.2095-2805.2018.6.143
中文关键词:  SiC MOSFET  温度  导通电阻  阈值电压  迁移率  界面态
英文关键词:SiC MOSFET  temperature  on-resistance  threshold voltage  mobility  interface state
基金项目:国家重点研发计划资助项目(2016YFB0400402);国家自然科学基金资助项目(51577169)
作者单位E-mail
江芙蓉 浙江大学电气工程学院, 杭州 310027  
杨树 浙江大学电气工程学院, 杭州 310027  
盛况 浙江大学电气工程学院, 杭州 310027 shengk@zju.edu.cn 
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中文摘要:
      通过对Cree公司三代SiC MOSFET样品在-160~200℃温度下进行测试,提取出每代器件在不同温度下的阈值电压、导通电阻等特征参数。分析比较了三代产品阈值电压、导通电阻随温度的变化趋势,以及不同温度下导通电阻与栅极电压的关系。运用建立物理模型的方法,对三代产品阈值电压、导通电阻各组成部分与温度的关系进行了比较研究。解释了SiC MOSFET的阈值电压的温度变化率随产品更新而逐代降低的原因,是栅极SiO2/SiC界面存在的陷阱密度在逐代地下降。通过TCAD仿真拟合转移特性随温度的变化,验证了新产品的界面态密度的降低,同时佐证了SiC MOSFET的技术水平在近几年有显著提升。
英文摘要:
      Three generations of SiC MOSFETs fabricated by Cree Inc. were tested at a temperature varying from -160 to 200℃, and the characteristic parameters of each generation, such as threshold voltage and on-resistance, were extracted. In particular, the temperature-dependence of threshold voltage and on-resistance, as well as the impact of gate bias on on-resistance, were analyzed and compared. Through the construction of a physical model, the relationships of threshold voltage and different components of on-resistance vs. temperature were compared for three generations. It was found that threshold voltage shows less temperature dependence along with the upgrade of SiC MOSFET, a plausible reason of which is the lower density of traps at the SiO2/SiC interface. By fitting the transfer characteristics at various temperatures using TCAD simulation, it was verified that the interface state density of the latest generation of SiC MOSFET was reduced, suggesting a significant improvement in SiC MOSFET technology in the past few years.
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