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陈之勃,陈永真.碳化硅MOSFET与硅MOSFET的应用对比分析[J].电源学报,2018,16(1):95-98
碳化硅MOSFET与硅MOSFET的应用对比分析
Comparative Analysis of Applications for SiC MOSFET and Silicon MOSFET
投稿时间:2016-09-29  修订日期:2017-04-27
DOI:10.13234/j.issn.2095-2805.2018.1.95
中文关键词:  碳化硅MOSFET  导通电压  开关速度  器件损耗
英文关键词:SiC MOSFET  on-voltage  switching speed  device loss
基金项目:
作者单位
陈之勃 辽宁工业大学电子与信息工程学院, 锦州 121001 
陈永真 辽宁工业大学电子与信息工程学院, 锦州 121001 
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中文摘要:
      碳化硅MOSFET具有导通电压低、开关速度极快、驱动能力要求相对低等特点,是替代高压硅MOSFET的理想器件之一。将额定电压、电流相同的碳化硅MOSFET和高性能硅MOSFET应用于反激式变换器中进行对比测试,实验结果表明,在相同的驱动条件和负载条件下,碳化硅MOSFET的开关速度明显快于硅MOSFET;在12 V驱动电平条件下,直接采用碳化硅MOSFET替代硅MOSFET使得变换器的效率明显提升;采用20 V栅极驱动电平,效果更加明显。
英文摘要:
      Owing to the characteristics of lower on-voltage, fast switching speed, and relatively lower requirement of drive capability, SiC MOSFET is an ideal substitution for silicon MOSFET. In this paper, SiC MOSFET and silicon MOSFET with the same rated voltage and rated current were applied to a flyback converter, and performance tests were conducted. Experimental results showed that under the same drive and resistance conditions, SiC MOSFET was significantly faster than silicon MOSFET in switching; at a 12 V drive level, even a simple replacement of silicon MOSFET by SiC MOSFET improved the converter's efficiency substantially, and this effect would be much more obvious at a 20 V gate drive level.
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