全碳化硅大功率直流电源关键技术研究
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国家自然科学基金优秀青年基金资助项目(51822701);国家自然科学基金重点资助项目(U1866211)


Research on Key Technologies for All SiC High-power DC Power Supply
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    摘要:

    碳化硅SiC(silicon carbide)功率器件的耐压、频率和损耗等特性均优于硅(Si)器件,然而SiC器件抗冲击能力差、电磁干扰大,且SiC器件对整个功率变换系统的贡献尚缺乏分析验证,因此,采用全SiC器件研制高性能的大功率直流电源具有一定挑战。首先针对SiC器件抗冲击能力差的问题,引入嵌入式保护策略,应对直流电源外部冲击扰动和短路故障。其次,针对电磁干扰大的问题,设计了电磁干扰滤波器抑制传导干扰。最后,比较全SiC电源和传统全Si电源,以实验研究的方式验证功率器件使用SiC器件的技术优势。对全SiC大功率直流电源的关键技术进行全面研究和实验验证,为SiC半导体器件在大功率电能变换中的应用提供了有益参考,并为其优异性能提供坚实依据。

    Abstract:

    Silicon carbide(SiC) power devices, which feature high voltage, high frequency and low power loss, are superior to silicon(Si) power devices. However, SiC power devices are poor in terms of the surge disturbance resistance capability and have large electromagnetic interference(EMI), and their contribution to the whole power conversion system is still lack of verification. As a result, it is a challenge of using all SiC power devices to develop high-power DC power supplies. In this paper, aimed at the poor surge disturbance resistance capability of SiC power devices, an embedded protection strategy is introduced at first to deal with the external surge disturbance and short-circuit fault. Second, an EMI filter is designed to suppress the conducted interference, thereby solving the problem of large EMI. Finally, the technical advantages of using SiC power devices were experimentally verified by comparing the all SiC power supply with the traditional all Si power supply. The key technologies for all SiC high-power DC power supply were comprehensively studied and experimentally verified, providing useful reference for the applications of SiC semiconductor devices in high-power conversion and laying a solid foundation for its excellent performance.

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李志君,黄波,黄小羽,郑琼林,李虹,邵天骢.全碳化硅大功率直流电源关键技术研究[J].电源学报,2021,19(1):215-222

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  • 收稿日期:2019-12-10
  • 最后修改日期:2020-08-26
  • 录用日期:2020-01-13
  • 在线发布日期: 2021-01-21